| PART |
Description |
Maker |
| IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
|
IDT
Integrated Device Technology, Inc.
SRAM
|
| IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
| AS7C25512PFS32_36A AS7C25512PFS36A-133TQC AS7C2551 |
Sync SRAM - 2.5V
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC
Alliance Semiconductor Corporation
Alliance Semiconductor, Corp.
|
| IDT71V67602133BG IDT71V67602133BGI IDT71V67602133B |
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
256K X 36 512K X 18 3.3V Synchronous SRAMs 2.5V I/O Burst Counter Pipelined Outputs Single Cycle Deselect
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
|
IDT[Integrated Device Technology]
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM
1.8V 2M x 9 QDR II PipeLined SRAM
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 2M x 8 QDR II Pipelined SRAM
18Mb Pipelined QDR II SRAM Burst of 4
|
IDT
http://
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18，为512k × 36，为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| AS7C33512PFS16A |
3.3V 512K x 16/18 pipeline burst synchronous SRAM
3.3V 512K×16 Pipeline Burst Synchronous SRAM(3.3V 512K×16流水线脉冲同步静态RAM) 3.312k × 16管道爆裂同步SRAM的电压（3.3V12k × 16流水线脉冲同步静态内存）
|
Alliance Semiconductor, Corp.
|
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